Wednesday, 31 August 2016

Numerical Analysis of the Heat Transfer in Hetero junction Device for Optoelectronic Applications

Physical and numerical descriptions related to the heat transfer phenomenon inside the multilayer nanomaterial of thin film are determined. The mathematical model, of a multilayer of thin film of tin dioxide that deposits on a composite substrate of Silicon Dioxide/Silicon, is studied and solved by two numerical techniques, by taking into account the variability of the thermal conductivity. 

Numerical Analysis of the Heat Transfer
The two main interests in this study are the determination of the value of the applied maximum temperature on the multilayer nanomaterial, and the analysis, of theeffect of the porosity medium that exists between certain layers, on the heattransfer. In plus, in order to determine our system physical parameters, the influence of the thickness of the thin deposit film is studied and the numerical model, which estimates these values in the hetero junction device, is analysed.

With the continued reduction of dimensions of technological devices, the heat produced can be important, component failures can occur. According to NASA, 90% of failures are due to defects and thermal interconnects, according to the USAir Force, 55% of electronic failures are due to thermal effects

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